STF11N65

STF11N65M5 vs STF11N65M2 vs STF11N65K3

 
PartNumberSTF11N65M5STF11N65M2STF11N65K3
DescriptionMOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSSMOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP packageMOSFET N-Ch 650V 0.765 11A SuperMESH 3 PWR MO
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V650 V
Id Continuous Drain Current9 A7 A11 A
Rds On Drain Source Resistance480 mOhms670 mOhms765 mOhms
Pd Power Dissipation85 W25 W35 W
ConfigurationSingleSingleSingle
TradenameMDmeshMDmesh II Plus-
PackagingTubeTubeTube
SeriesSTF11N65M5STF11N65M2STF11N65K3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity1000100050
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.011640 oz0.011640 oz0.011640 oz
Vgs th Gate Source Threshold Voltage-3 V-
Vgs Gate Source Voltage-25 V30 V
Qg Gate Charge-12.5 nC42 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Product-Power MOSFET-
Fall Time-15 ns35 ns
Rise Time-7.5 ns14 ns
Typical Turn Off Delay Time-26 ns44 ns
Typical Turn On Delay Time-9.5 ns14.5 ns
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STF11N65M5 MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
STF11N65M2 MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
STF11N65K3 MOSFET N-Ch 650V 0.765 11A SuperMESH 3 PWR MO
STF11N65M2 Darlington Transistors MOSFET POWER MOSFET
STF11N65K3 MOSFET N-CH 650V 11.0A TO220FP
STF11N65M5 MOSFET N CH 650V 9A TO-220FP
STF11N65M2(040Y) Nuevo y original
STF11N65M2(045Y) Nuevo y original
Top