PartNumber | STB10N60M2 | STB10N65K3 |
Description | MOSFET N-Ch 600V 0.55 Ohm typ. 7.5A | MOSFET N-CH 650V 0.75Ohm 10A Zener-protected |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V |
Id Continuous Drain Current | 7.5 A | 10 A |
Rds On Drain Source Resistance | 600 mOhms | 750 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4.5 V |
Vgs Gate Source Voltage | 25 V | 30 V |
Qg Gate Charge | 13.5 nC | 42 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 85 W | 150 W |
Configuration | Single | Single |
Tradename | MDmesh | SuperMesh |
Packaging | Reel | Reel |
Series | STB10N60M2 | STB10N65K3 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 13.2 ns | 35 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 8 ns | 14 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32.5 ns | 44 ns |
Typical Turn On Delay Time | 8.8 ns | 14.5 ns |
Unit Weight | 0.139332 oz | 0.139332 oz |
Channel Mode | - | Enhancement |