STB10N6

STB10N60M2 vs STB10N65K3

 
PartNumberSTB10N60M2STB10N65K3
DescriptionMOSFET N-Ch 600V 0.55 Ohm typ. 7.5AMOSFET N-CH 650V 0.75Ohm 10A Zener-protected
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V
Id Continuous Drain Current7.5 A10 A
Rds On Drain Source Resistance600 mOhms750 mOhms
Vgs th Gate Source Threshold Voltage4 V4.5 V
Vgs Gate Source Voltage25 V30 V
Qg Gate Charge13.5 nC42 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation85 W150 W
ConfigurationSingleSingle
TradenameMDmeshSuperMesh
PackagingReelReel
SeriesSTB10N60M2STB10N65K3
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time13.2 ns35 ns
Product TypeMOSFETMOSFET
Rise Time8 ns14 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time32.5 ns44 ns
Typical Turn On Delay Time8.8 ns14.5 ns
Unit Weight0.139332 oz0.139332 oz
Channel Mode-Enhancement
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
STB10N60M2 MOSFET N-Ch 600V 0.55 Ohm typ. 7.5A
STB10N65K3 MOSFET N-CH 650V 0.75Ohm 10A Zener-protected
STB10N60M2 MOSFET N-CH 600V 7.5A D2PAK
STB10N65K3 MOSFET N-CH 650V 10A D2PAK
STB10N60M2 10N60M2 Nuevo y original
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