PartNumber | SSM6P15FE(TE85L,F) |
Description | MOSFET LowON Res MOSFET ID=-.1A VDSS=-30V |
Manufacturer | Toshiba |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | ES6-6 |
Number of Channels | 2 Channel |
Transistor Polarity | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V |
Id Continuous Drain Current | 100 mA |
Rds On Drain Source Resistance | 8 Ohms |
Vgs th Gate Source Threshold Voltage | 1.7 V |
Vgs Gate Source Voltage | 20 V |
Minimum Operating Temperature | - |
Maximum Operating Temperature | + 150 C |
Pd Power Dissipation | 150 mW |
Configuration | Dual |
Channel Mode | Enhancement |
Packaging | Reel |
Height | 0.55 mm |
Length | 1.6 mm |
Series | SSM6P15 |
Transistor Type | 2 P-Channel |
Width | 1.2 mm |
Brand | Toshiba |
Forward Transconductance Min | 20 mS |
Product Type | MOSFET |
Factory Pack Quantity | 4000 |
Subcategory | MOSFETs |
Typical Turn Off Delay Time | 175 ns |
Typical Turn On Delay Time | 65 ns |
Unit Weight | 0.000106 oz |