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| PartNumber | SSM6N16FUTE85LF | SSM6N16FU | SSM6N16FUTE85L |
| Description | MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | ||
| Manufacturer | Toshiba | TOSHIBA | Toshiba Semiconductor and Storage |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Rds On Drain Source Resistance | 5.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | SSM6N16 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 125 ns | - | - |
| Typical Turn On Delay Time | 70 ns | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | US6 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 200mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 9.3pF @ 3V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 100mA |
| Rds On Max Id Vgs | - | - | 3 Ohm @ 10mA, 4V |
| Vgs th Max Id | - | - | 1.1V @ 100μA |
| Gate Charge Qg Vgs | - | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
SSM6N16FUTE85LF | MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | |
| SSM6N16FU | Nuevo y original | ||
| SSM6N16FUTE85L | Nuevo y original |