PartNumber | SSM3J15CT(TPL3) | SSM3J15F | SSM3J15CT |
Description | MOSFET P-Ch Sm Sig FET Id -1.0A -30V -20VGS | ||
Manufacturer | Toshiba | TOSHIBA | Toshiba |
Product Category | MOSFET | IC Chips | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | CST3-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 100 mA | - | - |
Rds On Drain Source Resistance | 14 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
Pd Power Dissipation | 100 mW | - | - |
Configuration | Single | - | Single |
Packaging | Reel | - | Reel |
Height | 0.38 mm | - | - |
Length | 1 mm | - | - |
Series | SSM3J15 | - | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Width | 0.6 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 175 ns | - | 175 ns |
Typical Turn On Delay Time | 65 ns | - | 65 ns |
Unit Weight | 0.000026 oz | - | - |
Package Case | - | - | DFN-1006B-3 |
Pd Power Dissipation | - | - | 100 mW |
Id Continuous Drain Current | - | - | - 100 mA |
Vds Drain Source Breakdown Voltage | - | - | - 30 V |
Vgs th Gate Source Threshold Voltage | - | - | - 1.7 V |
Rds On Drain Source Resistance | - | - | 14 Ohms |