 |  | | |
| PartNumber | SQD23N06-31L_GE3 | SQD23N06-31L_T4GE3 | SQD23N06-31L-GE3 |
| Description | MOSFET 60V 23A 100W AEC-Q101 Qualified | MOSFET 60V Vds 20V Vgs TO-252 | MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 23 A | 23 A | - |
| Rds On Drain Source Resistance | 24 mOhms | 31 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 24 nC | 24 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 37 W | 37 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | - | Reel |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | 25 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 2000 | 1 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 14 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Unit Weight | 0.050717 oz | - | 0.050717 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD23N06-31L_GE3 | MOSFET 60V 23A 100W AEC-Q101 Qualified | |
| SQD23N06-31L_T4GE3 | MOSFET 60V Vds 20V Vgs TO-252 | ||
| SQD23N06-31L-GE3 | MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 | ||
Vishay |
SQD23N06-31L_GE3 | MOSFET N-CH 60V 23A TO252 | |
| SQD23N06-31L | Nuevo y original | ||
| SQD23N06-31L-GE3 | N-CHANNEL 60V DPAK | ||
| SQD23N0631LGE3 | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |