PartNumber | SQD23N06-31L_GE3 | SQD23N06-31L_T4GE3 | SQD23N06-31L-GE3 |
Description | MOSFET 60V 23A 100W AEC-Q101 Qualified | MOSFET 60V Vds 20V Vgs TO-252 | MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 23 A | 23 A | - |
Rds On Drain Source Resistance | 24 mOhms | 31 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 24 nC | 24 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 37 W | 37 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | - | Reel |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | SQ | SQ | SQ |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 25 S | 25 S | - |
Fall Time | 3 ns | 3 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 2000 | 1 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | 14 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Unit Weight | 0.050717 oz | - | 0.050717 oz |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Vishay / Siliconix |
SQD23N06-31L_GE3 | MOSFET 60V 23A 100W AEC-Q101 Qualified | |
SQD25N15-52_GE3 | MOSFET 150V 25A 136W AEC-Q101 Qualified | ||
SQD25N06-22L_T4GE3 | MOSFET 60V 25A 62W AEC-Q101 Qualified | ||
SQD25N06-22L_GE3 | MOSFET 60V 25A 62W AEC-Q101 Qualified | ||
SQD23N06-31L_T4GE3 | MOSFET 60V Vds 20V Vgs TO-252 | ||
SQD25N15-52-T4_GE3 | MOSFET 150V Vds 20V Vgs TO-252 | ||
SQD23N06-31L-GE3 | MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 | ||
SQD25N15-52-GE3 | MOSFET RECOMMENDED ALT 781-SQD25N15-52_GE3 | ||
SQD25N15-52-GE3 | RF Bipolar Transistors MOSFET 150V 25A 136W 5.2mohm @ 10V | ||
SQD25N06-22L-T4GE3 | RF Bipolar Transistors MOSFET 60V 25A 62W | ||
SQD25N06-22L_GE3-CUT TAPE | Nuevo y original | ||
SQD200A40 | Nuevo y original | ||
SQD200A6 | Nuevo y original | ||
SQD200A60 | Nuevo y original | ||
SQD200AA100 | Nuevo y original | ||
SQD200AA100(120) | Nuevo y original | ||
SQD200AA100/120 | Nuevo y original | ||
SQD200AA60 | Nuevo y original | ||
SQD200BA60 | Nuevo y original | ||
SQD2011K | Nuevo y original | ||
SQD23N06-31L | Nuevo y original | ||
SQD23N06-31L-GE3 | N-CHANNEL 60V DPAK | ||
SQD23N0631LGE3 | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
SQD25N06-22L | Nuevo y original | ||
SQD25N06-22L-GE3 | MOSFET 60V 25A 62W N-Ch Automotive | ||
SQD25N06-35L-GE3 | MOSFET RECOMMENDED ALT 78-SQD25N06-22LT4GE | ||
SQD25N0622LGE3 | Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
SQD25N15-52 | Nuevo y original | ||
SQD25N15-52-E3 | Nuevo y original | ||
SQD2C | Nuevo y original | ||
SQD2M | Nuevo y original | ||
SQD2V | Nuevo y original | ||
Vishay |
SQD23N06-31L_GE3 | MOSFET N-CH 60V 23A TO252 | |
SQD25N15-52_GE3 | MOSFET N-CH 150V 25A TO252 | ||
SQD25N06-22L_GE3 | MOSFET N-CH 60V 25A TO252 |