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| PartNumber | SQ4532AEY-T1_GE3 | SQ4532AEY | SQ4532AEY-T1-GE3 |
| Description | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.3 A, 5.3 A | - | - |
| Rds On Drain Source Resistance | 21 mOhms, 56 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V, 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 5.9 nC, 7.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.3 W, 3.3 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 22 S, 5.5 S | - | - |
| Fall Time | 19 ns, 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns, 17 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns, 19 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 6 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ4532AEY-T1_GE3 | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | |
| SQ4532AEY | Nuevo y original | ||
| SQ4532AEY-T1-GE3 | Nuevo y original | ||
Vishay |
SQ4532AEY-T1_GE3 | MOSFET N/P-CH 30V 7.3/5.3A 8SOIC |