SQ3427

SQ3427AEEV-T1_GE3 vs SQ3427EV-T1_GE3 vs SQ3427EEV-T1-GE3

 
PartNumberSQ3427AEEV-T1_GE3SQ3427EV-T1_GE3SQ3427EEV-T1-GE3
DescriptionMOSFET -60V Vds +/-20V Vgs AEC-Q101 QualifiedMOSFET P Ch -60Vds 20Vgs AEC-Q101 QualifiedIGBT Transistors MOSFET 60V 5.5A 5W P-Ch Automotive
ManufacturerVishayVishayVIS
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current5.3 A5.3 A-
Rds On Drain Source Resistance95 mOhms95 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge15.3 nC15.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation5 W5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.05 mm3.05 mm-
SeriesSQSQ-
Transistor Type1 P-Channel1 P-Channel-
Width1.65 mm1.65 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min9 S9 S-
Fall Time33 ns33 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns24 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns25 ns-
Typical Turn On Delay Time8 ns8 ns-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ3427AEEV-T1_GE3 MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified
SQ3427EV-T1_GE3 MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Vishay
Vishay
SQ3427EEV-T1-GE3 IGBT Transistors MOSFET 60V 5.5A 5W P-Ch Automotive
SQ3427AEEV-T1_GE3 MOSFET P-CH 60V 6TSOP
SQ3427EV-T1_GE3 MOSFET P-CH 60V 6TSOP
SQ3427AEEV-T1_GE3-CUT TAPE Nuevo y original
SQ3427EV-T1_GE3-CUT TAPE Nuevo y original
SQ3427EEV Nuevo y original
SQ3427EEV-T1-E3 Nuevo y original
SQ3427EV Nuevo y original
SQ3427EV-T1-GE3 Nuevo y original
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