PartNumber | SPD06N80C3ATMA1 | SPD06N60C3ATMA1 | SPD06N60C3BTMA1 |
Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 6.2A TO-252 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
Id Continuous Drain Current | 6 A | 6.2 A | - |
Rds On Drain Source Resistance | 900 mOhms | 680 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 31 nC | 31 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 83 W | 74 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS C3 | CoolMOS C3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 8 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 12 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 72 ns | 52 ns | - |
Typical Turn On Delay Time | 25 ns | 7 ns | - |
Part # Aliases | SP001117772 SPD06N80C3 | SP001117770 SPD06N60C3 | - |
Unit Weight | 0.016579 oz | 0.139332 oz | - |
Forward Transconductance Min | - | 5.6 S | - |