 |  | |
| PartNumber | SPD04P10PGBTMA1 | SPD04P10PG |
| Description | MOSFET P-Ch -100V -4A DPAK-2 | Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| Manufacturer | Infineon | INF |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-252-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 4 A | - |
| Rds On Drain Source Resistance | 644 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 38 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 2.3 mm | - |
| Length | 6.5 mm | - |
| Series | XPD04P10 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 6.22 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 1.2 S | - |
| Fall Time | 4.5 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 8.6 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 14 ns | - |
| Typical Turn On Delay Time | 5.7 ns | - |
| Part # Aliases | G SP000212230 SPD04P10P SPD4P1PGXT | - |
| Unit Weight | 0.139332 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD04P10PGBTMA1 | MOSFET P-Ch -100V -4A DPAK-2 | |
| SPD04P10PGBTMA1 | MOSFET P-CH 100V 4A TO252-3 | ||
| SPD04P10PG | Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |