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| PartNumber | SPD04N60C3ATMA1 | SPD04N60C3BTMA1 | SPD04N60C3 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS C3 |
| Manufacturer | Infineon | Infineon | infineon |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C3 | - | CoolMOS C3 |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001117764 SPD04N60C3 | SP000313944 SPD04N60C3BTMA1 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Part Aliases | - | - | SP000313944 SPD04N60C3BTMA1 SPD04N60C3XT |
| Package Case | - | - | TO-252-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 50 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9.5 ns |
| Rise Time | - | - | 2.5 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 950 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 58.5 ns |
| Typical Turn On Delay Time | - | - | 6 ns |
| Channel Mode | - | - | Enhancement |