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| PartNumber | SPD01N60 | SPD01N60C3 | SPD01N60C3BTMA1 |
| Description | MOSFET N-Ch 600V 800mA DPAK-2 CoolMOS C3 | MOSFET N-CH 650V 0.8A TO-252 | |
| Manufacturer | - | INFINEON | - |
| Product Category | - | FETs - Single | - |
| Series | - | CoolMOS C3 | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SP000307382 SPD01N60C3BTMA1 SPD01N60C3XT | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | CoolMOS | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 11 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 25 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 800 mA | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 6 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 55 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| SPD01N60 | Nuevo y original | ||
| SPD01N60C3 | MOSFET N-Ch 600V 800mA DPAK-2 CoolMOS C3 | ||
Infineon Technologies |
SPD01N60C3BTMA1 | MOSFET N-CH 650V 0.8A TO-252 |