PartNumber | SPB08P06P G | SPB08P06PGATMA1 | SPB08P06P |
Description | MOSFET P-Ch -60V 8.8A D2PAK-2 | MOSFET SMALL SIGNAL+P-CH | MOSFET P-CH 60V 8.8A D2PAK |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 8.8 A | - | - |
Rds On Drain Source Resistance | 300 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 42 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | SIPMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | SPB08P06 | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 14 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 46 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 48 ns | - | - |
Typical Turn On Delay Time | 16 ns | - | - |
Part # Aliases | SP000102179 SPB08P06PGATMA1 SPB8P6PGXT | G SP000102179 SPB08P06P SPB8P6PGXT | - |
Unit Weight | 0.067021 oz | 0.139332 oz | - |