SPB08

SPB08P06P G vs SPB08P06PGATMA1 vs SPB08P06P

 
PartNumberSPB08P06P GSPB08P06PGATMA1SPB08P06P
DescriptionMOSFET P-Ch -60V 8.8A D2PAK-2MOSFET SMALL SIGNAL+P-CHMOSFET P-CH 60V 8.8A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current8.8 A--
Rds On Drain Source Resistance300 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation42 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameSIPMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesSPB08P06--
Transistor Type1 P-Channel1 P-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time14 ns--
Product TypeMOSFETMOSFET-
Rise Time46 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time48 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSP000102179 SPB08P06PGATMA1 SPB8P6PGXTG SP000102179 SPB08P06P SPB8P6PGXT-
Unit Weight0.067021 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
SPB08P06P G MOSFET P-Ch -60V 8.8A D2PAK-2
SPB08P06P MOSFET P-CH 60V 8.8A D2PAK
SPB08P06PGATMA1 MOSFET P-CH 60V 8.8A TO-263
Infineon Technologies
Infineon Technologies
SPB08P06PGATMA1 MOSFET SMALL SIGNAL+P-CH
SPB0804-4R7M Nuevo y original
SPB08N03L - Bulk (Alt: SPB08N03L)
SPB08N50C3 Nuevo y original
SPB08N60C3 Nuevo y original
SPB08P06P G MOSFET P-Ch -60V 8.8A D2PAK-2
SPB08P06PG Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179)
SPB08P06PGXT -60V,-8.8A,P-channel power MOSFET
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