SPB08P06PGATMA1

SPB08P06PGATMA1
Mfr. #:
SPB08P06PGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-CH 60V 8.8A TO-263
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPB08P06PGATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
SPB08P06PG, SPB08P, SPB08, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***Components
In a Pack of 20, P-Channel MOSFET, 8.8 A, 60 V, 3-Pin D2PAK Infineon SPB08P06PGATMA1
***ical
Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) TO-263
***et
Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R
***i-Key
MOSFET P-CH 60V 8.8A TO-263
***ronik
P-CH 60V 300mOhm 8,8A TO263
***ment14 APAC
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Parte # Mfg. Descripción Valores Precio
SPB08P06PGATMA1
DISTI # V72:2272_06384662
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1971
  • 1000:$0.4955
  • 500:$0.5008
  • 250:$0.5719
  • 100:$0.5779
  • 25:$0.7571
  • 10:$0.8411
  • 1:$0.9862
SPB08P06PGATMA1
DISTI # V36:1790_06384662
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.3215
  • 500000:$0.3218
  • 100000:$0.3573
  • 10000:$0.4234
  • 1000:$0.4347
SPB08P06PGATMA1
DISTI # SPB08P06PGATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 60V 8.8A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 1000:$0.4347
SPB08P06PGATMA1
DISTI # 27576379
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1971
  • 23:$0.9862
SPB08P06PGATMA1
DISTI # 31053382
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$0.2946
SPB08P06PGATMA1
DISTI # SP000102179
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 4000
  • 10000:€0.2789
  • 6000:€0.3009
  • 4000:€0.3259
  • 2000:€0.3559
  • 1000:€0.4349
SPB08P06PGAT
DISTI # SPB08P06PGATMA1
Infineon Technologies AGTrans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB08P06PGATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$0.2799
  • 10000:$0.2849
  • 6000:$0.2949
  • 4000:$0.3059
  • 2000:$0.3179
SPB08P06PGATMA1
DISTI # 47W3751
Infineon Technologies AGMOSFET, P CHANNEL, 60V, 8.8A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.221ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes797
  • 500:$0.5300
  • 100:$0.6000
  • 10:$0.7810
  • 1:$0.9090
SPB08P06P G
DISTI # 726-SPB08P06PG
Infineon Technologies AGMOSFET P-Ch -60V 8.8A D2PAK-2
RoHS: Compliant
1968
  • 1:$0.9000
  • 10:$0.7730
  • 100:$0.5940
  • 500:$0.5250
  • 1000:$0.4140
  • 2000:$0.3680
  • 10000:$0.3540
SPB08P06PGATMA1Infineon Technologies AGPower Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
4000
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
SPB08P06PGATMA1
DISTI # 8922201P
Infineon Technologies AGMOSFET P-CHANNEL 60V 8.8A TO263-3, RL2640
  • 5000:£0.2970
  • 2000:£0.3030
  • 1000:£0.3090
  • 200:£0.4370
SPB08P06PGATMA1
DISTI # SPB08P06PGATMA1
Infineon Technologies AGTransistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO263-3625
  • 100:$0.3900
  • 10:$0.4500
  • 3:$0.5600
  • 1:$0.6500
SPB08P06PGATMA1
DISTI # 2212898
Infineon Technologies AGMOSFET, P-CH, 60V, 8.8A, TO-263
RoHS: Compliant
797
  • 1000:$0.6240
  • 500:$0.7910
  • 100:$0.8950
  • 10:$1.1600
  • 1:$1.3600
SPB08P06PGATMA1
DISTI # 2212898
Infineon Technologies AGMOSFET, P-CH, 60V, 8.8A, TO-2631347
  • 500:£0.3800
  • 250:£0.4060
  • 100:£0.4300
  • 25:£0.5620
  • 5:£0.6610
Imagen Parte # Descripción
SPB08P06P G

Mfr.#: SPB08P06P G

OMO.#: OMO-SPB08P06P-G

MOSFET P-Ch -60V 8.8A D2PAK-2
SPB08P06PGATMA1

Mfr.#: SPB08P06PGATMA1

OMO.#: OMO-SPB08P06PGATMA1

MOSFET SMALL SIGNAL+P-CH
SPB08P06P

Mfr.#: SPB08P06P

OMO.#: OMO-SPB08P06P-INFINEON-TECHNOLOGIES

MOSFET P-CH 60V 8.8A D2PAK
SPB08P06P G

Mfr.#: SPB08P06P G

OMO.#: OMO-SPB08P06P-G-1190

MOSFET P-Ch -60V 8.8A D2PAK-2
SPB08P06PG

Mfr.#: SPB08P06PG

OMO.#: OMO-SPB08P06PG-1190

Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R (Alt: SP000102179)
SPB08P06PGATMA1

Mfr.#: SPB08P06PGATMA1

OMO.#: OMO-SPB08P06PGATMA1-INFINEON-TECHNOLOGIES

MOSFET P-CH 60V 8.8A TO-263
SPB08P06PGXT

Mfr.#: SPB08P06PGXT

OMO.#: OMO-SPB08P06PGXT-1190

-60V,-8.8A,P-channel power MOSFET
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SPB08P06PGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,44 US$
0,44 US$
10
0,41 US$
4,13 US$
100
0,39 US$
39,15 US$
500
0,37 US$
184,90 US$
1000
0,35 US$
348,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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