PartNumber | SIZ920DT-T1-GE3 | SIZ920 | SIZ920DT |
Description | MOSFET RECOMMENDED ALT 78-SIZ998DT-T1-GE3 | ||
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAIR-6x5-8 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 0.75 mm | - | - |
Length | 6 mm | - | - |
Series | SIZ | TrenchFETR | - |
Width | 5 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SIZ920DT-GE3 | - | - |
Part Aliases | - | SIZ920DT-GE3 | - |
Package Case | - | 6-PowerPair | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 6-PowerPair | - |
Configuration | - | Dual | - |
FET Type | - | 2 N-Channel (Half Bridge) | - |
Power Max | - | 39W, 100W | - |
Transistor Type | - | 2 N-Channel | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 1260pF @ 15V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 40A | - |
Rds On Max Id Vgs | - | 7.1 mOhm @ 18.9A, 10V | - |
Vgs th Max Id | - | 2.5V @ 250μA | - |
Gate Charge Qg Vgs | - | 35nC @ 10V | - |
Pd Power Dissipation | - | 100 W | - |
Id Continuous Drain Current | - | 40 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 7.1 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Channel Mode | - | Enhancement | - |