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SIZ920DT-T1-GE3

SIZ920DT-T1-GE3
Mfr. #:
SIZ920DT-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ920DT-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIZ920DT-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-PowerPair
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
6-PowerPair
Configuración
Doble
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
39W, 100W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1260pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
40A
Rds-On-Max-Id-Vgs
7.1 mOhm @ 18.9A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
35nC @ 10V
Disipación de potencia Pd
100 W
Id-corriente-de-drenaje-continua
40 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
7.1 mOhms
Polaridad del transistor
Canal N
Modo de canal
Mejora
Tags
SIZ920D, SIZ920, SIZ92, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R
***ark
MOSFET, N-CH, DUAL, 30V, PP 5X6
***nell
MOSFET, N-CH, DUAL, 30V, PP 5X6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:100W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAIR; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
SIZ920DT-T1-GE3
DISTI # SIZ920DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIZ920DT-T1-GE3
    DISTI # SIZ920DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIZ920DT-T1-GE3
      DISTI # SIZ920DT-T1-GE3DKR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIZ920DT-T1-GE3
        DISTI # SIZ920DT-T1-GE3        		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ920DT-T1-GE3)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 27000
          SIZ920DT-T1-GE3
          DISTI # 78-SIZ920DT-T1-GE3          		Vishay IntertechnologiesMOSFET 30V 40A 100W 7.1mohm @ 10V
          RoHS: Compliant          		0
            SIZ920DTT1GE3Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		90
              • 5:£1.1200
              • 25:£1.0200
              • 100:£0.7850
              • 250:£0.7340
              • 500:£0.6840
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		0
              • 1:$3.6500
              • 10:$3.0200
              • 100:$2.3700
              • 500:$1.9500
              Imagen Parte # Descripción
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3

              		 MOSFET RECOMMENDED ALT 78-SIZ998DT-T1-GE3
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3-VISHAY

              		 RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
              SIZ920DT

              Mfr.#: SIZ920DT

              OMO.#: OMO-SIZ920DT-1190

              		 Nuevo y original
              SIZ920DTT1GE3

              Mfr.#: SIZ920DTT1GE3

              OMO.#: OMO-SIZ920DTT1GE3-1190

              		 Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              Disponibilidad
              Valores:
              Available
              En orden:
              1500
              Ingrese la cantidad:
              El precio actual de SIZ920DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
              Precio de referencia (USD)
              Cantidad
              Precio unitario
              Ext. Precio
              1
              2,50 US$
              2,50 US$
              10
              2,38 US$
              23,80 US$
              100
              2,25 US$
              225,45 US$
              500
              2,13 US$
              1 064,65 US$
              1000
              2,00 US$
              2 004,00 US$
              Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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