 | | |
| PartNumber | SIRA60DP-T1-GE3 | SIRA60DP-T1-RE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Series | SIR | SIR |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V |
| Id Continuous Drain Current | - | 100 A |
| Rds On Drain Source Resistance | - | 780 uOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V |
| Vgs Gate Source Voltage | - | 20 V, - 16 V |
| Qg Gate Charge | - | 125 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 57 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 100 S |
| Fall Time | - | 10 ns |
| Rise Time | - | 20 ns |
| Typical Turn Off Delay Time | - | 40 ns |
| Typical Turn On Delay Time | - | 15 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA60DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | |
| SIRA60DP-T1-RE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIRA60DP-T1-GE3 | MOSFET N-CH 30V 100A POWERPAKSO | |
| SIRA60DP-T1-RE3 | MOSFET N-CH 30V 100A POWERPAKSO | ||
| SIRA60DP | Nuevo y original |