SIRA60DP-T1-GE3

SIRA60DP-T1-GE3
Mfr. #:
SIRA60DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRA60DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA60DP-T1-GE3 DatasheetSIRA60DP-T1-GE3 Datasheet (P4-P6)SIRA60DP-T1-GE3 Datasheet (P7-P9)SIRA60DP-T1-GE3 Datasheet (P10-P12)SIRA60DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIRA60DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.017870 oz
Tags
SIRA60, SIRA6, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 0.94 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 30V 100A 8-Pin PowerPAK SO EP T/R
***et Europe
MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 100A POWERPAKSO
***ark
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):780�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):780µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):780µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIRA60DP-T1-GE3
DISTI # V72:2272_17597354
Vishay IntertechnologiesSIRA60DP-T1-GE3**MULT1
9172
3106965
364
  • 75000:$0.5796
  • 30000:$0.5810
  • 15000:$0.5823
  • 6000:$0.5836
  • 3000:$0.5900
  • 1000:$0.6526
  • 500:$0.7651
  • 250:$0.8946
  • 100:$0.9065
  • 50:$1.0985
  • 25:$1.1958
  • 10:$1.2113
  • 1:$1.6261
SIRA60DP-T1-GE3
DISTI # SIRA60DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$0.5992
  • 3000:$0.6292
SIRA60DP-T1-GE3
DISTI # SIRA60DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA60DP-T1-GE3
DISTI # SIRA60DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA60DP-T1-GE3
DISTI # 31325187
Vishay IntertechnologiesSIRA60DP-T1-GE3**MULT1
9172
3106965
364
  • 15000:$0.6260
  • 6000:$0.6274
  • 3000:$0.6342
  • 1000:$0.7015
  • 500:$0.8225
  • 250:$0.9617
  • 100:$0.9745
  • 50:$1.1809
  • 25:$1.2855
  • 11:$1.3021
SIRA60DP-T1-GE3
DISTI # SIRA60DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA60DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    SIRA60DP-T1-GE3
    DISTI # SIRA60DP-T1-GE3
    Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA60DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.5479
    • 30000:$0.5629
    • 18000:$0.5789
    • 12000:$0.6039
    • 6000:$0.6229
    SIRA60DP-T1-GE3
    DISTI # 20AC3870
    Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.5440
    • 6000:$0.5570
    • 4000:$0.5780
    • 2000:$0.6420
    • 1000:$0.7070
    • 1:$0.7370
    SIRA60DP-T1-GE3
    DISTI # 99Y9654
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):780µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes94
    • 500:$0.8220
    • 250:$0.8890
    • 100:$0.9550
    • 50:$1.0500
    • 25:$1.1500
    • 10:$1.2400
    • 1:$1.5000
    SIRA60DP-T1-GE3
    DISTI # 78-SIRA60DP-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    4449
    • 1:$1.4900
    • 10:$1.2300
    • 100:$0.9450
    • 500:$0.8130
    • 1000:$0.6410
    • 3000:$0.5990
    • 6000:$0.5690
    • 9000:$0.5560
    SIRA60DP-T1-GE3
    DISTI # 2663708
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO294
    • 100:£0.9120
    • 25:£1.1800
    • 5:£1.3000
    SIRA60DP-T1-GE3
    DISTI # XSFT00000033017
    Vishay SiliconixN-CHANNEL 30 V 0.94 MOHM 57 W TRENCHFET GEN IVMOSFET - POWERPAK SO-8
    RoHS: Compliant
    60000 in Stock0 on Order
    • 3000:$0.7400
    SIRA60DP-T1-GE3
    DISTI # 2663708
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO
    RoHS: Compliant
    94
    • 3000:$0.9670
    • 1000:$0.9870
    • 500:$1.2600
    • 100:$1.4600
    • 10:$1.8900
    • 1:$2.3000
    Imagen Parte # Descripción
    TPD2E2U06DRLR

    Mfr.#: TPD2E2U06DRLR

    OMO.#: OMO-TPD2E2U06DRLR

    TVS Diodes / ESD Suppressors Dual-Ch High-Speed ESD Protection
    ECMF04-4HSM10

    Mfr.#: ECMF04-4HSM10

    OMO.#: OMO-ECMF04-4HSM10

    TVS Diodes / ESD Suppressors Common mode filter w/ ESD protection
    FZT491ATA

    Mfr.#: FZT491ATA

    OMO.#: OMO-FZT491ATA

    Bipolar Transistors - BJT NPN Medium Power
    IPD60R180P7ATMA1

    Mfr.#: IPD60R180P7ATMA1

    OMO.#: OMO-IPD60R180P7ATMA1

    MOSFET
    SIRA52DP-T1-GE3

    Mfr.#: SIRA52DP-T1-GE3

    OMO.#: OMO-SIRA52DP-T1-GE3

    MOSFET 40V Vds 20V Vgs PowerPAK SO-8
    BQ28Z610DRZR

    Mfr.#: BQ28Z610DRZR

    OMO.#: OMO-BQ28Z610DRZR

    Battery Management 1S - 2S I2C GG
    TPS70933DRVR

    Mfr.#: TPS70933DRVR

    OMO.#: OMO-TPS70933DRVR

    LDO Voltage Regulators 150mA 30V Ultra-Low IQ Wide Inpt LDO Reg
    PLPC2-6MM

    Mfr.#: PLPC2-6MM

    OMO.#: OMO-PLPC2-6MM

    LED Light Pipes 2mm Round Lens 6mm Rigid Light Pipe
    WSL20101L000FEA18

    Mfr.#: WSL20101L000FEA18

    OMO.#: OMO-WSL20101L000FEA18

    Current Sense Resistors - SMD 1watt .001ohms 1%
    SIRA52DP-T1-GE3

    Mfr.#: SIRA52DP-T1-GE3

    OMO.#: OMO-SIRA52DP-T1-GE3-VISHAY

    MOSFET N-CH 40V 60A PPAK SO-8
    Disponibilidad
    Valores:
    15
    En orden:
    1998
    Ingrese la cantidad:
    El precio actual de SIRA60DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,49 US$
    1,49 US$
    10
    1,23 US$
    12,30 US$
    100
    0,94 US$
    94,50 US$
    500
    0,81 US$
    406,50 US$
    1000
    0,64 US$
    641,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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