PartNumber | SIHP6N40D-GE3 | SIHP6N40D-E3 | SIHP6N65E-GE3 |
Description | MOSFET 400V Vds 30V Vgs TO-220AB | MOSFET 400V Vds 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 400 V | 400 V | 650 V |
Id Continuous Drain Current | 6 A | 6 A | 7 A |
Rds On Drain Source Resistance | 1 Ohms | 1 Ohms | 600 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 9 nC | 9 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 104 W | 104 W | 78 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 15.49 mm | 15.49 mm | 15.49 mm |
Length | 10.41 mm | 10.41 mm | 10.41 mm |
Series | D | D | E |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 8 ns | 8 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 11 ns | 12 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | 14 ns | 30 ns |
Typical Turn On Delay Time | 12 ns | 12 ns | 14 ns |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |