SIHP6N

SIHP6N40D-GE3 vs SIHP6N40D-E3 vs SIHP6N65E-GE3

 
PartNumberSIHP6N40D-GE3SIHP6N40D-E3SIHP6N65E-GE3
DescriptionMOSFET 400V Vds 30V Vgs TO-220ABMOSFET 400V Vds 30V Vgs TO-220ABMOSFET 650V Vds 30V Vgs TO-220AB
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage400 V400 V650 V
Id Continuous Drain Current6 A6 A7 A
Rds On Drain Source Resistance1 Ohms1 Ohms600 mOhms
Vgs th Gate Source Threshold Voltage5 V5 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge9 nC9 nC24 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation104 W104 W78 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Height15.49 mm15.49 mm15.49 mm
Length10.41 mm10.41 mm10.41 mm
SeriesDDE
Width4.7 mm4.7 mm4.7 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time8 ns8 ns20 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns11 ns12 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns14 ns30 ns
Typical Turn On Delay Time12 ns12 ns14 ns
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP6N80E-GE3 MOSFET 800V Vds 30V Vgs TO-220AB
SIHP6N40D-GE3 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N40D-E3 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP6N65E-GE3 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHP6N40D-GE3 IGBT Transistors MOSFET N-CHANNEL 400V
SIHP6N40D-E3 RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHP6N80E-GE3 MOSFET N-CHAN 800V TO-220AB
SIHP6N40D Nuevo y original
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