SIHP6N80E-GE3

SIHP6N80E-GE3
Mfr. #:
SIHP6N80E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 800V Vds 30V Vgs TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP6N80E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
SIHP6N80E-GE3 DatasheetSIHP6N80E-GE3 Datasheet (P4-P6)SIHP6N80E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHP6N80E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220AB-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
5.4 A
Rds On - Resistencia de la fuente de drenaje:
820 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
44 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Serie:
E
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
2.5 S
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
27 ns
Tiempo típico de retardo de encendido:
13 ns
Tags
SIHP6N, SIHP6, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHP6N80E-GE3
DISTI # V99:2348_21764889
Vishay IntertechnologiesSIHP6N80E-GE31000
  • 5000:$1.0465
  • 2500:$1.0687
  • 1000:$1.1254
  • 500:$1.3758
  • 100:$1.5734
  • 10:$2.0259
  • 1:$2.6594
SIHP6N80E-GE3
DISTI # SIHP6N80E-GE3-ND
Vishay SiliconixMOSFET N-CHAN 800V TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 5000:$1.0743
  • 3000:$1.1156
  • 1000:$1.1982
  • 100:$1.7601
  • 25:$2.0660
  • 10:$2.1900
  • 1:$2.4400
SIHP6N80E-GE3
DISTI # 29068400
Vishay IntertechnologiesSIHP6N80E-GE31000
  • 5000:$1.0465
  • 2500:$1.0687
  • 1000:$1.1254
  • 500:$1.3758
  • 100:$1.5734
  • 10:$2.0259
  • 7:$2.6594
SIHP6N80E-GE3
DISTI # 59AC7415
Vishay IntertechnologiesN-CHANNEL 800V0
  • 2500:$1.0300
  • 1000:$1.1600
  • 500:$1.3300
  • 100:$1.4800
  • 50:$1.6600
  • 25:$1.8100
  • 10:$1.9600
  • 1:$2.4000
SIHP6N80E-GE3
DISTI # 78-SIHP6N80E-GE3
Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220AB
RoHS: Compliant
1045
  • 1:$2.4500
  • 10:$2.0400
  • 100:$1.5800
  • 500:$1.3800
  • 1000:$1.1500
Imagen Parte # Descripción
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3

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SIHP6N40D-GE3

Mfr.#: SIHP6N40D-GE3

OMO.#: OMO-SIHP6N40D-GE3-VISHAY

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SIHP6N40D-E3

Mfr.#: SIHP6N40D-E3

OMO.#: OMO-SIHP6N40D-E3-VISHAY

RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHP6N40D

Mfr.#: SIHP6N40D

OMO.#: OMO-SIHP6N40D-1190

Nuevo y original
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3-VISHAY

MOSFET N-CHAN 800V TO-220AB
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de SIHP6N80E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,45 US$
2,45 US$
10
2,04 US$
20,40 US$
100
1,58 US$
158,00 US$
500
1,38 US$
690,00 US$
1000
1,15 US$
1 150,00 US$
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