| PartNumber | SIHFR9120-GE3 | SIHFR9024TR-GE3 | SIHFR9014-GE3 |
| Description | MOSFET -100V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
| Id Continuous Drain Current | 5.6 A | 8.8 A | 5.1 A |
| Rds On Drain Source Resistance | 600 mOhms | 280 mOhms | 500 mOhms |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 18 nC | 19 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 42 W | 42 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | SIH | SIH | SIH |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 1.5 S | 2.9 S | 1.4 S |
| Fall Time | 25 ns | 29 ns | 31 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | 68 ns | 63 ns |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 15 ns | 9.6 ns |
| Typical Turn On Delay Time | 9.6 ns | 13 ns | 11 ns |