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| PartNumber | SIA910EDJ-T1-GE3 | SIA910EDJ-T1-GE3-CUT TAPE | SIA910EDJT1GE3 |
| Description | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SC70-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 7.8 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2.05 mm | - | - |
| Series | SIA | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 2.05 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 23 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SIA910EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA910EDJ-T1-GE3 | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | |
| SIA910EDJ-T1-GE3-CUT TAPE | Nuevo y original | ||
| SIA910EDJT1GE3 | Nuevo y original | ||
Vishay |
SIA910EDJ-T1-GE3 | MOSFET 2N-CH 12V 4.5A SC-70-6 |