SIA910EDJ-T1-GE3

Mfr. #:: SIA910EDJ-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET 2N-CH 12V 4.5A SC-70-6
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA910EDJ-T1-GE3 Ficha de datos
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Más información:: SIA910EDJ-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: Chips de IC

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIA910EDJ-GE3

Unidad de peso: 0.000988 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SC-70-6 Dual

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: PowerPAKR SC-70-6 Dual

Configuración: Doble

Tipo FET: 2 N-Channel (Dual)

Potencia máxima: 7.8W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 12V

Entrada-Capacitancia-Ciss-Vds: 455pF @ 6V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 4.5A

Rds-On-Max-Id-Vgs: 28 mOhm @ 5.2A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Puerta-Carga-Qg-Vgs: 16nC @ 8V

Disipación de potencia Pd: 7.8 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Id-corriente-de-drenaje-continua: 4.5 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Resistencia a la fuente de desagüe de Rds: 23 mOhms

Polaridad del transistor: Canal N

Qg-Gate-Charge: 10.5 nC

Transconductancia directa-Mín.: 23 S

Tags: SIA910, SIA91, SIA9, SIA

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA910EDJ-T1-GE3 Descripción

***ure Electronics: Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

***ical: Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R

***ronik: N+N-MOS+ESD 4,5A 12V PP-SC70-6

***nell: MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-

SIA910EDJ-T1-GE3 Más información

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2392
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2719 500:$0.3399 100:$0.4589 10:$0.5950 1:$0.6800
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA910EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4369 6000:€0.2979 12000:€0.2559 18000:€0.2369 30000:€0.2199
SIA910EDJ-T1-GE3 DISTI # SIA910EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA910EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2029 6000:$0.1969 12000:$0.1889 18000:$0.1839 30000:$0.1789
SIA910EDJ-T1-GE3 DISTI # 05W6927	Vishay Intertechnologies	Trans MOSFET N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 05W6927) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.2500
SIA910EDJ-T1-GE3 DISTI # 97W2599	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV , RoHS Compliant: Yes	0	1:$0.6000 25:$0.4790 50:$0.4220 100:$0.3640 250:$0.3320 500:$0.3000 1000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 05W6927	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.1670 25:$0.1670 50:$0.1670 100:$0.1670 250:$0.1670 500:$0.1670 1000:$0.1670
SIA910EDJ-T1-GE3. DISTI # 30AC0111	Vishay Intertechnologies	DUAL N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2500 3000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 70459579	Vishay Siliconix	12V 4.5A/4.5A N-CH DUAL MOSFET RoHS: Compliant	0	3000:$0.6670 6000:$0.5120
SIA910EDJ-T1-GE3 DISTI # 781-SIA910EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	0	1:$0.6000 10:$0.4790 100:$0.3640 500:$0.3000 1000:$0.2500
SIA910EDJ-T1-GE3 DISTI # 2335391	Vishay Intertechnologies	MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK RoHS: Compliant	0	5:£0.4180 25:£0.3920 100:£0.2810 250:£0.2570 500:£0.2320
SIA910EDJ-T1-GE3 DISTI # 2335391	Vishay Intertechnologies	MOSFET, DUAL N CH, 12V, 4.5A, POWERPAK RoHS: Compliant	0	1:$0.9500 10:$0.7590 100:$0.5770 500:$0.4750 1000:$0.3960 3000:$0.3960
SIA910EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - Stock

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SIA910EDJ-T1-GE3 OMO.#: OMO-SIA910EDJ-T1-GE3	MOSFET 12V Vds 8V Vgs PowerPAK SC-70
	Mfr.#: SIA910EDJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA910EDJ-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SIA910EDJ-T1-GE3 OMO.#: OMO-SIA910EDJ-T1-GE3-VISHAY	MOSFET 2N-CH 12V 4.5A SC-70-6
	Mfr.#: SIA910EDJT1GE3 OMO.#: OMO-SIA910EDJT1GE3-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 2000
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El precio actual de SIA910EDJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,26 US$~~; ~~0,26 US$~~

10: ~~0,24 US$~~; ~~2,44 US$~~

100: ~~0,23 US$~~; ~~23,07 US$~~

500: ~~0,22 US$~~; ~~108,95 US$~~

1000: ~~0,21 US$~~; ~~205,10 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SIA910 3
SIA91 27
SIA9 60
SIA 347

SIA910EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes