 |  | | |
| PartNumber | SIA414DJ-T1-GE3-CUT TAPE | SIA414DJ-T1-GE3 | SIA414DJ-TI-E3 |
| Description | MOSFET N-CH 8V 12A SC70-6 | ||
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | FETs - Single | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SIA414DJ-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PowerPAKR SC-70-6 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | PowerPAKR SC-70-6 Single | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 19W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 8V | - |
| Input Capacitance Ciss Vds | - | 1800pF @ 4V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 12A (Tc) | - |
| Rds On Max Id Vgs | - | 11 mOhm @ 9.7A, 4.5V | - |
| Vgs th Max Id | - | 800mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 32nC @ 5V | - |
| Pd Power Dissipation | - | 3.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 10 ns | - |
| Vgs Gate Source Voltage | - | 5 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Vds Drain Source Breakdown Voltage | - | 8 V | - |
| Rds On Drain Source Resistance | - | 11 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 65 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Forward Transconductance Min | - | 50 S | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| SIA414DJ-T1-GE3-CUT TAPE | Nuevo y original | ||
| SIA414DJ-TI-E3 | Nuevo y original | ||
Vishay |
SIA414DJ-T1-GE3 | MOSFET N-CH 8V 12A SC70-6 |