SIA414DJ-T1-GE3

Mfr. #:: SIA414DJ-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 8V 12A SC70-6
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA414DJ-T1-GE3 Ficha de datos
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HTML Datasheet:: SIA414DJ-T1-GE3 Datasheet SIA414DJ-T1-GE3 Datasheet (P4-P6)SIA414DJ-T1-GE3 Datasheet (P7-P9)
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Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIA414DJ-GE3

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SC-70-6

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR SC-70-6 Single

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 19W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 8V

Entrada-Capacitancia-Ciss-Vds: 1800pF @ 4V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 12A (Tc)

Rds-On-Max-Id-Vgs: 11 mOhm @ 9.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

Puerta-Carga-Qg-Vgs: 32nC @ 5V

Disipación de potencia Pd: 3.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 20 ns

Hora de levantarse: 10 ns

Vgs-Puerta-Fuente-Voltaje: 5 V

Id-corriente-de-drenaje-continua: 12 A

Vds-Drain-Source-Breakdown-Voltage: 8 V

Resistencia a la fuente de desagüe de Rds: 11 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 65 ns

Tiempo de retardo de encendido típico: 12 ns

Transconductancia directa-Mín.: 50 S

Modo de canal: Mejora

Tags: SIA414DJ-T, SIA414D, SIA414, SIA41, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA414DJ-T1-GE3 Descripción

***ure Electronics: N Channel 8 V 0.041 O 19 W 32 nC Surface Mount Power MosFet - PPAK-SC-70-6

***et: Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R

***ark: N-Channel 8-V (D-S) Mosfet Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,8V,12A,SC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:8V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:5V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA414DJ-T1-GE3 DISTI # V72:2272_09216826	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 10:$0.7788 1:$0.8567
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6211In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6211In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.4158
SIA414DJ-T1-GE3 DISTI # C1S803601323334	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 10:$0.7788
SIA414DJ-T1-GE3 DISTI # 25790297	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	46	25:$0.4167 19:$0.7788
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA414DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.3825 6000:$0.2943 9000:$0.2342 15000:$0.1979 30000:$0.1822 75000:$0.1766 150000:$0.1713
SIA414DJ-T1-GE3 DISTI # SIA414DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA414DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3929 6000:$0.3809 12000:$0.3649 18000:$0.3549 30000:$0.3459
SIA414DJ-T1-GE3 DISTI # 85W0169	Vishay Intertechnologies	N CHANNEL MOSFET, 8V, 12A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV , RoHS Compliant: Yes	0	1:$0.4000 3000:$0.3970 6000:$0.3780 12000:$0.3350
SIA414DJ-T1-GE3 DISTI # 16P3612	Vishay Intertechnologies	N CHANNEL MOSFET, 8V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:800mV,Product Range:- , RoHS Compliant: Yes	0	1:$0.9500 25:$0.7780 50:$0.6880 100:$0.5970 250:$0.5560 500:$0.5140 1000:$0.4050
SIA414DJ-T1-GE3 DISTI # 781-SIA414DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant	0	1:$0.9500 10:$0.7780 100:$0.5970 500:$0.5140 1000:$0.4050 3000:$0.3780
SIA414DJ-T1-GE3	Vishay Semiconductors	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	6495	5683:$0.2520 2668:$0.2640 1:$0.9600
SIA414DJ-T1-GE3	Vishay Siliconix	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	3234	2668:$0.2640 596:$0.3000 1:$0.9600
SIA414DJ-T1-GE3	Vishay Dale	12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET	2930	2668:$0.2640 596:$0.3000 1:$0.9600
SIA414DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant	Americas -
SIA414DJ-T1-GE3 DISTI # 1838996	Vishay Intertechnologies	MOSFET,N CH,8V,12A,SC70-6 RoHS: Compliant	0	10:$1.5000 50:$1.2100 100:$0.9650 500:$0.8370 1000:$0.7240 2500:$0.6720

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SIA414DJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA414DJ-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SIA414DJ OMO.#: OMO-SIA414DJ-1190	Nuevo y original
	Mfr.#: SIA414DJ-T1-GE3 OMO.#: OMO-SIA414DJ-T1-GE3-VISHAY	MOSFET N-CH 8V 12A SC70-6
	Mfr.#: SIA414DJ-TI-E3 OMO.#: OMO-SIA414DJ-TI-E3-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 2000
Ingrese la cantidad:

El precio actual de SIA414DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,38 US$~~; ~~0,38 US$~~

10: ~~0,36 US$~~; ~~3,59 US$~~

100: ~~0,34 US$~~; ~~34,02 US$~~

500: ~~0,32 US$~~; ~~160,65 US$~~

1000: ~~0,30 US$~~; ~~302,40 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SIA414DJ-T 3
SIA414D 4
SIA414 5
SIA41 28
SIA4 136
SIA 347

SIA414DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes