SI7501D

SI7501DN-T1-E3 vs SI7501DN vs SI7501DN-T1

 
PartNumberSI7501DN-T1-E3SI7501DNSI7501DN-T1
DescriptionIGBT Transistors MOSFET COMPLEMENTARY 30-V (D-S)
ManufacturerVishay Siliconix--
Product CategoryFETs - Arrays--
SeriesTrenchFETR--
PackagingDigi-ReelR--
Package CasePowerPAKR 1212-8 Dual--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Supplier Device PackagePowerPAKR 1212-8 Dual--
FET TypeN and P-Channel, Common Drain--
Power Max1.6W--
Drain to Source Voltage Vdss30V--
Input Capacitance Ciss Vds---
FET FeatureLogic Level Gate--
Current Continuous Drain Id 25°C5.4A, 4.5A--
Rds On Max Id Vgs35 mOhm @ 7.7A, 10V--
Vgs th Max Id3V @ 250μA--
Gate Charge Qg Vgs14nC @ 10V--
Fabricante Parte # Descripción RFQ
Vishay
Vishay
SI7501DN-T1-GE3 IGBT Transistors MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V
SI7501DN-T1-E3 IGBT Transistors MOSFET COMPLEMENTARY 30-V (D-S)
SI7501DN-T1-E3-CUT TAPE Nuevo y original
SI7501DN Nuevo y original
SI7501DN-T1 Nuevo y original
SI7501DNT1E3 Nuevo y original
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