SI7405B

SI7405BDN-T1-E3 vs SI7405BDN vs SI7405BDN-T1-GE3

 
PartNumberSI7405BDN-T1-E3SI7405BDNSI7405BDN-T1-GE3
DescriptionRF Bipolar Transistors MOSFET 12V 16A 33W 13mohm @ 4.5VMOSFET P-CH 12V 16A 1212-8
ManufacturerVISHAY-Vishay Siliconix
Product CategoryFETs - Single-FETs - Single
PackagingReel-Digi-ReelR Alternate Packaging
Part AliasesSI7405BDN-E3-SI7405BDN-GE3
Mounting StyleSMD/SMT-SMD/SMT
Package CasePowerPAK-1212-8-PowerPAKR 1212-8
TechnologySi-Si
Number of Channels1 Channel-1 Channel
ConfigurationSingle-Single
Transistor Type1 P-Channel-1 P-Channel
Pd Power Dissipation3.6 W-3.6 W
Maximum Operating Temperature+ 150 C-+ 150 C
Minimum Operating Temperature- 55 C-- 55 C
Fall Time45 ns-45 ns
Rise Time60 ns-60 ns
Vgs Gate Source Voltage8 V-8 V
Id Continuous Drain Current13.5 A-13.5 A
Vds Drain Source Breakdown Voltage- 12 V-- 12 V
Rds On Drain Source Resistance13 mOhms-13 mOhms
Transistor PolarityP-Channel-P-Channel
Typical Turn Off Delay Time80 ns-80 ns
Typical Turn On Delay Time22 ns-22 ns
Channel ModeEnhancement-Enhancement
Series--TrenchFETR
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PowerPAKR 1212-8
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--33W
Drain to Source Voltage Vdss--12V
Input Capacitance Ciss Vds--3500pF @ 6V
FET Feature--Standard
Current Continuous Drain Id 25°C--16A (Tc)
Rds On Max Id Vgs--13 mOhm @ 13.5A, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--115nC @ 8V
Fabricante Parte # Descripción RFQ
Vishay
Vishay
SI7405BDN-T1-E3 RF Bipolar Transistors MOSFET 12V 16A 33W 13mohm @ 4.5V
SI7405BDN-T1-GE3 MOSFET P-CH 12V 16A 1212-8
SI7405BDN Nuevo y original
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