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| PartNumber | SI7382DP-T1-GE3 | SI7382DP-T1-E3 | SI7382DP |
| Description | RF Bipolar Transistors MOSFET 30V 24A 5.0W 4.7mohm @ 10V | RF Bipolar Transistors MOSFET 30V 24A 5.0W 4.7mohm @ 10V | |
| Manufacturer | VIS | VISHAY | - |
| Product Category | FETs - Single | FETs - Single | - |
| Packaging | Reel | Reel | - |
| Part Aliases | SI7382DP-GE3 | SI7382DP-E3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | SO-8 | SO-8 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 1.8 W | 1.8 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 14 A | 14 A | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | - | 16 ns | - |
| Rise Time | - | 16 ns | - |
| Typical Turn Off Delay Time | - | 67 ns | - |
| Typical Turn On Delay Time | - | 18 ns | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay |
SI7382DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 24A 5.0W 4.7mohm @ 10V | |
| SI7382DP-T1-E3 | RF Bipolar Transistors MOSFET 30V 24A 5.0W 4.7mohm @ 10V | ||
| SI7382DP | Nuevo y original |