SI7218

SI7218DN-T1-GE3 vs SI7218DN vs SI7218DN-T1-E3

 
PartNumberSI7218DN-T1-GE3SI7218DNSI7218DN-T1-E3
DescriptionMOSFET RECOMMENDED ALT 781-SI7228DN-GE3MOSFET 2N-CH 30V 24A 1212-8
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Arrays
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAK-1212-8--
TradenameTrenchFET--
PackagingReel-Digi-ReelR Alternate Packaging
Height1.04 mm--
Length3.3 mm--
SeriesSI7-TrenchFETR
Width3.3 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI7218DN-GE3--
Part Aliases--SI7218DN-E3
Package Case--PowerPAKR 1212-8 Dual
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--PowerPAKR 1212-8 Dual
Configuration--Dual
FET Type--2 N-Channel (Dual)
Power Max--23W
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--700pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--24A
Rds On Max Id Vgs--25 mOhm @ 8A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--17nC @ 10V
Pd Power Dissipation--2.6 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--10 ns
Rise Time--12 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--8 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--25 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--10 ns
Typical Turn On Delay Time--15 ns
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7218DN-T1-GE3 MOSFET RECOMMENDED ALT 781-SI7228DN-GE3
Vishay
Vishay
SI7218DN-T1-GE3 RF Bipolar Transistors MOSFET 30V 24A 23W 25mohm @ 10V
SI7218DN-T1-E3 MOSFET 2N-CH 30V 24A 1212-8
SI7218DN Nuevo y original
Top