 | |  | |
| PartNumber | SI7100DN-T1-GE3 | SI7100DN-T1-E3 | SI7100DN |
| Description | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | |
| Manufacturer | VISHAY | VISHAY | SI |
| Product Category | FETs - Single | FETs - Single | IC Chips |
| Series | SI71xxDx | SI71xxDx | - |
| Packaging | Reel | Reel | - |
| Part Aliases | SI7100DN-GE3 | SI7100DN-E3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 3.8 W | 3.8 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 50 C | - 50 C | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Id Continuous Drain Current | 26.1 A | 26.1 A | - |
| Vds Drain Source Breakdown Voltage | 8 V | 8 V | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.5 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | - | 10 ns 8 ns | - |
| Rise Time | - | 57 ns 52 ns | - |
| Typical Turn Off Delay Time | - | 61 ns 53 ns | - |
| Typical Turn On Delay Time | - | 19 ns 14 ns | - |
| Channel Mode | - | Enhancement | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay |
SI7100DN-T1-GE3 | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | |
| SI7100DN-T1-E3 | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | ||
| SI7100DN | Nuevo y original |