| PartNumber | SI7190DP-T1-GE3 | Si7190ADP-T1-RE3 | SI7186DP-T1-GE3 |
| Description | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | MOSFET RECOMMENDED ALT 78-SIR880ADP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI7 | - | SI7 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI7190DP-GE3 | - | SI7186DP-GE3 |
| Unit Weight | 0.017870 oz | - | 0.017870 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 250 V | - |
| Id Continuous Drain Current | - | 14.4 A | - |
| Rds On Drain Source Resistance | - | 102 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 22.4 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 56.8 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 11 S | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 5 ns | - |
| Typical Turn Off Delay Time | - | 23 ns | - |
| Typical Turn On Delay Time | - | 13 ns | - |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.15 mm |