SI6981

SI6981DQ-T1-E3 vs SI6981DQ vs SI6981DQ-T1

 
PartNumberSI6981DQ-T1-E3SI6981DQSI6981DQ-T1
DescriptionIGBT Transistors MOSFET DUAL P-CH 20V (D-S)
ManufacturerVishay Siliconix--
Product CategoryFETs - Arrays--
SeriesTrenchFETR--
PackagingDigi-ReelR--
Package Case8-TSSOP (0.173", 4.40mm Width)--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeSurface Mount--
Supplier Device Package8-TSSOP--
FET Type2 P-Channel (Dual)--
Power Max830mW--
Drain to Source Voltage Vdss20V--
Input Capacitance Ciss Vds---
FET FeatureLogic Level Gate--
Current Continuous Drain Id 25°C4.1A--
Rds On Max Id Vgs31 mOhm @ 4.8A, 4.5V--
Vgs th Max Id900mV @ 300μA--
Gate Charge Qg Vgs25nC @ 4.5V--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6981DQ-T1-GE3 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
Vishay
Vishay
SI6981DQ-T1-E3 IGBT Transistors MOSFET DUAL P-CH 20V (D-S)
SI6981DQ-T1-GE3 IGBT Transistors MOSFET 20V 4.8A 1.14W 31mohm @ 4.5V
SI6981DQ Nuevo y original
SI6981DQ-T1 Nuevo y original
SI6981DQT1E3 Transisto
Top