SI698

SI6983DQ-T1-E3 vs SI6981DQ-T1-GE3 vs SI6981DQ-T1-E3

 
PartNumberSI6983DQ-T1-E3SI6981DQ-T1-GE3SI6981DQ-T1-E3
DescriptionMOSFET DUAL P-CH 2.5V (D-S)MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3IGBT Transistors MOSFET DUAL P-CH 20V (D-S)
ManufacturerVishayVishayVishay Siliconix
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSEE-
TechnologySiSi-
TradenameTrenchFETTrenchFET-
PackagingReelReelDigi-ReelR
SeriesSI6SI6TrenchFETR
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSI6983DQ-E3SI6981DQ-GE3-
Unit Weight0.005573 oz0.005573 oz-
Mounting Style-SMD/SMT-
Package / Case-TSSOP-8-
Height-1.2 mm-
Length-4.4 mm-
Width-3 mm-
Package Case--8-TSSOP (0.173", 4.40mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-TSSOP
FET Type--2 P-Channel (Dual)
Power Max--830mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds---
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4.1A
Rds On Max Id Vgs--31 mOhm @ 4.8A, 4.5V
Vgs th Max Id--900mV @ 300μA
Gate Charge Qg Vgs--25nC @ 4.5V
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6983DQ-T1-E3 MOSFET DUAL P-CH 2.5V (D-S)
SI6981DQ-T1-GE3 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
Vishay
Vishay
SI6981DQ-T1-E3 IGBT Transistors MOSFET DUAL P-CH 20V (D-S)
SI6981DQ-T1-GE3 IGBT Transistors MOSFET 20V 4.8A 1.14W 31mohm @ 4.5V
SI6983DQ-T1-E3 Nuevo y original
SI6983DQ-T1-GE3 MOSFET 2P-CH 20V 4.6A 8TSSOP
SI6981DQ Nuevo y original
SI6981DQ-T1 Nuevo y original
SI6981DQT1E3 Transisto
SI6982S Nuevo y original
SI6986BEDQ-T1 Nuevo y original
SI6989DQ Nuevo y original
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