PartNumber | SI6433BDQ-T1-E3 | SI6433BDQ-T1-GE3 | SI6433BDQ-T1 |
Description | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 | IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V | Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | - |
Series | SI6 | SI6433BDQ | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI6433BDQ-E3 | - | - |
Unit Weight | 0.005573 oz | 0.005573 oz | - |
Part Aliases | - | SI6433BDQ-GE3 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | TSSOP-8 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 P-Channel | - |
Pd Power Dissipation | - | 1.05 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 60 ns | - |
Rise Time | - | 60 ns | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 4 A | - |
Vds Drain Source Breakdown Voltage | - | - 12 V | - |
Rds On Drain Source Resistance | - | 40 mOhms | - |
Transistor Polarity | - | P-Channel | - |
Typical Turn Off Delay Time | - | 70 ns | - |
Typical Turn On Delay Time | - | 45 ns | - |
Channel Mode | - | Enhancement | - |