SI6433BDQ-T

SI6433BDQ-T1-E3 vs SI6433BDQ-T1-GE3 vs SI6433BDQ-T1

 
PartNumberSI6433BDQ-T1-E3SI6433BDQ-T1-GE3SI6433BDQ-T1
DescriptionMOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5VSmall Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
TradenameTrenchFET--
PackagingReelReel-
SeriesSI6SI6433BDQ-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI6433BDQ-E3--
Unit Weight0.005573 oz0.005573 oz-
Part Aliases-SI6433BDQ-GE3-
Mounting Style-SMD/SMT-
Package Case-TSSOP-8-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 P-Channel-
Pd Power Dissipation-1.05 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-60 ns-
Rise Time-60 ns-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-4 A-
Vds Drain Source Breakdown Voltage-- 12 V-
Rds On Drain Source Resistance-40 mOhms-
Transistor Polarity-P-Channel-
Typical Turn Off Delay Time-70 ns-
Typical Turn On Delay Time-45 ns-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6433BDQ-T1-E3 MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3
Vishay
Vishay
SI6433BDQ-T1-E3 IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
SI6433BDQ-T1-GE3 IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
SI6433BDQ-T1 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI6433BDQ-TI Nuevo y original
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