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SI6433BDQ-T1-GE3

SI6433BDQ-T1-GE3
Mfr. #:
SI6433BDQ-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI6433BDQ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI6433BDQ-T1-GE3 DatasheetSI6433BDQ-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SI6433BDQ
embalaje
Carrete
Alias ​​de parte
SI6433BDQ-GE3
Unidad de peso
0.005573 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSSOP-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
1.05 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
60 ns
Hora de levantarse
60 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
4 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Resistencia a la fuente de desagüe de Rds
40 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
70 ns
Tiempo de retardo de encendido típico
45 ns
Modo de canal
Mejora
Tags
SI6433BDQ-T1, SI6433BDQ-T, SI6433B, SI6433, SI643, SI64, SI6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 12V 4A 8-Pin TSSOP T/R
***nell
P CHANNEL MOSFET, -12V, 4.8A, TSSOP
***i-Key
MOSFET P-CH 12V 4A 8-TSSOP
***ment14 APAC
P CHANNEL MOSFET, -12V, 4.8A, TSSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs Typ:-1.5V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4800mA; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1.5V; Power Dissipation, Pd:1.05W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI6433BDQ-T1-GE3
DISTI # SI6433BDQ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4A 8-TSSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI6433BDQ-T1-GE3
    DISTI # SI6433BDQ-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 12V 4A 8-TSSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI6433BDQ-T1-GE3
      DISTI # SI6433BDQ-T1-GE3DKR-ND      		Vishay SiliconixMOSFET P-CH 12V 4A 8-TSSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI6433BDQ-T1-GE3
        DISTI # 781-SI6433BDQ-T1-GE3        		Vishay IntertechnologiesMOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
        RoHS: Compliant        		0
          SI6433BDQ-T1-GE3
          DISTI # 1690240          		Vishay IntertechnologiesP CHANNEL MOSFET, -12V, 4.8A, TSSOP
          RoHS: Compliant          		0
          • 10:$1.2800
          • 50:$1.0300
          • 100:$0.8220
          • 500:$0.7130
          • 1000:$0.6170
          • 2500:$0.5730
          Imagen Parte # Descripción
          SI6433BDQ-T1-E3

          Mfr.#: SI6433BDQ-T1-E3

          OMO.#: OMO-SI6433BDQ-T1-E3

          		 MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3
          SI6433BDQ-T1-E3

          Mfr.#: SI6433BDQ-T1-E3

          OMO.#: OMO-SI6433BDQ-T1-E3-VISHAY

          		 IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
          SI6433BDQ-T1-GE3

          Mfr.#: SI6433BDQ-T1-GE3

          OMO.#: OMO-SI6433BDQ-T1-GE3-VISHAY

          		 IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V
          SI6433BDQ

          Mfr.#: SI6433BDQ

          OMO.#: OMO-SI6433BDQ-1190

          		 Nuevo y original
          SI6433BDQ-T1

          Mfr.#: SI6433BDQ-T1

          OMO.#: OMO-SI6433BDQ-T1-1190

          		 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          SI6433BDQ-TI

          Mfr.#: SI6433BDQ-TI

          OMO.#: OMO-SI6433BDQ-TI-1190

          		 Nuevo y original
          SI6433BDQT1E3

          Mfr.#: SI6433BDQT1E3

          OMO.#: OMO-SI6433BDQT1E3-1190

          		 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          Disponibilidad
          Valores:
          Available
          En orden:
          4000
          Ingrese la cantidad:
          El precio actual de SI6433BDQ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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          Ext. Precio
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          10
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          100
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          500
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          1000
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          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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