PartNumber | SI5935CDC-T1-GE3 | SI5935CDC-T1-E3 | SI5935CDC-T1-G |
Description | MOSFET -20V Vds 8V Vgs 1206-8 ChipFET | MOSFET -20V Vds 8V Vgs 1206-8 ChipFET | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | ChipFET-8 | ChipFET-8 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 100 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 11 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.1 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.05 mm | 3.05 mm | - |
Series | SI54 | SI54 | - |
Transistor Type | 2 P-Channel | - | - |
Width | 1.65 mm | 1.65 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 9.5 S | - | - |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 32 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | SI5935CDC-GE3 SIR814DP-T1-GE3 | SI5935CDC-E3 | - |
Unit Weight | 0.002998 oz | 0.002998 oz | - |