SI5935CDC-T

SI5935CDC-T1-GE3 vs SI5935CDC-T1-E3 vs SI5935CDC-T1-G

 
PartNumberSI5935CDC-T1-GE3SI5935CDC-T1-E3SI5935CDC-T1-G
DescriptionMOSFET -20V Vds 8V Vgs 1206-8 ChipFETMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseChipFET-8ChipFET-8-
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.05 mm3.05 mm-
SeriesSI54SI54-
Transistor Type2 P-Channel--
Width1.65 mm1.65 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min9.5 S--
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time32 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI5935CDC-GE3 SIR814DP-T1-GE3SI5935CDC-E3-
Unit Weight0.002998 oz0.002998 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5935CDC-T1-GE3 MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
SI5935CDC-T1-E3 MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
SI5935CDC-T1-GE3-CUT TAPE Nuevo y original
SI5935CDC-T1-G Nuevo y original
SI5935CDC-TI-GE3 Nuevo y original
Vishay
Vishay
SI5935CDC-T1-E3 Nuevo y original
SI5935CDC-T1-GE3 MOSFET 2P-CH 20V 4A 1206-8
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