 | | | |
| PartNumber | SI5402DC-T2 | SI5402DC-T1 | SI5402DC-T1-E3. |
| Description | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 | |
| Manufacturer | Vishay / Siliconix | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | ChipFET-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 10 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6.7 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 35 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5402DC-T3 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | |
| SI5402DC-T3 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
| SI5402DC-T2 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
| SI5402DC-T1 | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 | ||
| SI5402DC-T1-E3. | Nuevo y original | ||
Vishay |
SI5402DC-T1-E3 | MOSFET N-CH 30V 4.9A 1206-8 | |
| SI5402DC-T1-GE3 | MOSFET N-CH 30V 4.9A 1206-8 |