PartNumber | SI5403DC-T1-GE3 | SI5402DC-T3 | SI5402BDC-T1-GE3 |
Description | MOSFET -30V Vds 20V Vgs 1206-8 ChipFET | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | N | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | ChipFET-8 | ChipFET-8 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 30 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 28 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 6.3 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.05 mm | 3.05 mm | - |
Series | SI54 | SI5 | SI5 |
Transistor Type | 1 P-Channel | - | - |
Width | 1.65 mm | 1.65 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 18 S | - | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | SI5403DC-GE3 | - | SI5402BDC-GE3 |
Unit Weight | 0.002998 oz | 0.002998 oz | 0.002998 oz |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Vishay / Siliconix |
SI5403DC-T1-GE3 | MOSFET -30V Vds 20V Vgs 1206-8 ChipFET | |
SI5402DC-T3 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
SI5404BDC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | ||
SI5406CDC-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | ||
SI5406DC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | ||
SI5402BDC-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 | ||
SI5402DC-T3 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
SI5402DC-T2 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
SI5403DC-T1-GE3-CUT TAPE | Nuevo y original | ||
SI5400CY | Nuevo y original | ||
SI5402BDC | Nuevo y original | ||
SI5402BDC-T1-E3 , MAX650 | Nuevo y original | ||
SI5402BDL | Nuevo y original | ||
SI5402DC-T1 | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 | ||
SI5402DC-T1-E3. | Nuevo y original | ||
SI5403DC | Nuevo y original | ||
SI5403DCD-T1-GE3 | Nuevo y original | ||
SI5404DC | Nuevo y original | ||
SI5404DC-T1 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | ||
SI5404DC-T1-E3 | Nuevo y original | ||
SI5404DC-T1-E3 SOT163- | Nuevo y original | ||
SI5404DC-T1. | Nuevo y original | ||
SI5406CDC | Nuevo y original | ||
SI5406CDC-T1-GE3-S | Nuevo y original | ||
SI5406DC | Nuevo y original | ||
SI5406DC-T1 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | ||
SI5406DC-T1-E3-S | Nuevo y original | ||
SI5406DP-TI-E3 | Nuevo y original | ||
SI54090-A01AGT | Nuevo y original | ||
SI54090-B01AGT | Nuevo y original | ||
SI540AN | Nuevo y original | ||
SI540SAN | Nuevo y original | ||
Vishay |
SI5404BDC-T1-GE3 | RF Bipolar Transistors MOSFET 20V 7.5A 2.5W 28mohm @ 4.5V | |
SI5401DC-T1-E3 | MOSFET P-CH 20V 5.2A 1206-8 | ||
SI5401DC-T1-GE3 | MOSFET P-CH 20V 5.2A 1206-8 | ||
SI5402BDC-T1-E3 | MOSFET N-CH 30V 4.9A 1206-8 | ||
SI5402BDC-T1-GE3 | MOSFET N-CH 30V 4.9A 1206-8 | ||
SI5402DC-T1-E3 | MOSFET N-CH 30V 4.9A 1206-8 | ||
SI5403DC-T1-GE3 | MOSFET P-CH 30V 6A 1206-8 | ||
SI5404BDC-T1-E3 | MOSFET N-CH 20V 5.4A 1206-8 | ||
SI5406CDC-T1-GE3 | MOSFET N-CH 12V 6A 1206-8 | ||
SI5402DC-T1-GE3 | MOSFET N-CH 30V 4.9A 1206-8 | ||
SI5406DC-T1-E3 | MOSFET N-CH 12V 6.9A 1206-8 | ||
SI5406DC-T1-GE3 | MOSFET N-CH 12V 6.9A 1206-8 |