PartNumber | SI4963BDY-T1-E3 | SI4963BDY-T1-GE3 | SI4965DY-T1-E3 |
Description | MOSFET 20V 6.2A 2W | MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V | MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | SO-8 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI4 | SI4 | SI4 |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI4963BDY-E3 | SI4963BDY-GE3 | SI4965DY-E3 |
Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Vishay / Siliconix |
SI4963BDY-T1-E3 | MOSFET 20V 6.2A 2W | |
SI4963BDY-T1-GE3 | MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V | ||
SI4967DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 | ||
SI4965DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 | ||
SI4966DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 | ||
SI4965DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 | ||
SI4966DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 | ||
SI4967DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 | ||
Vishay |
SI4966DY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 7.1A 2.0W 25mohm @ 4.5V | |
SI4963BDY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V | ||
SI4963BDY-T1-E3 | MOSFET 2P-CH 20V 4.9A 8-SOIC | ||
SI4965DY-T1-E3 | MOSFET 2P-CH 8V 8SOIC | ||
SI4965DY-T1-GE3 | MOSFET 2P-CH 8V 8SOIC | ||
SI4966DY-T1-E3 | MOSFET 2N-CH 20V 8SOIC | ||
SI4967DY-T1-E3 | MOSFET 2P-CH 12V 8SOIC | ||
SI4967DY-T1-GE3 | MOSFET 2P-CH 12V 8SOIC | ||
SI4963 | Nuevo y original | ||
SI4963- | Nuevo y original | ||
SI49630Y | Nuevo y original | ||
SI4963DY | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
SI4963DY-T1 | MOSFET Transistor, Matched Pair, P-Channel, SO | ||
SI4963DY-T1 SOP8 | Nuevo y original | ||
SI4963DY-T1-E3 | MOSFET 20V 6.2A 2W | ||
SI4963DY-T1-E3. | Nuevo y original | ||
SI4963DY-T1-GE3 | Nuevo y original | ||
SI4963DY-TI-E3 | Nuevo y original | ||
SI4963DYT1 | MOSFET Transistor, Matched Pair, P-Channel, SO | ||
SI4963DYT1E3 | Nuevo y original | ||
SI4965 | Nuevo y original | ||
SI4965D | Nuevo y original | ||
SI4965DY | MOSFET 8V 8A 2W | ||
SI4965DY-T1 | MOSFET RECOMMENDED ALT 781-SI4931DY-T1-E3 | ||
SI4965DYT1 | Power Field-Effect Transistor, 8A I(D), 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
SI4966 | Nuevo y original | ||
SI4966DY | MOSFET 20V 7.1A 2W | ||
SI4966DY-E3 | MOSFET 20V 7.1A 2W | ||
SI4966DY-T1 | MOSFET RECOMMENDED ALT 781-SI9926CDY-E3 | ||
SI4966DYT1 | Nuevo y original | ||
SI4966EY-T1-GE3 | Nuevo y original | ||
SI4967 | Nuevo y original | ||
SI4967DY-T1 | MOSFET 12V 7.5A 2W |