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Parte # | Mfg. | Descripción | Valores | Precio |
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SI4963BDY-T1-E3 DISTI # V36:1790_09216505 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R RoHS: Compliant | 17500 |
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SI4963BDY-T1-E3 DISTI # V72:2272_09216505 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R RoHS: Compliant | 2197 |
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SI4963BDY-T1-E3 DISTI # SI4963BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 14153In Stock |
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SI4963BDY-T1-E3 DISTI # SI4963BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 14153In Stock |
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SI4963BDY-T1-E3 DISTI # SI4963BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 7500In Stock |
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SI4963BDY-T1-E3 DISTI # 30882871 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R RoHS: Compliant | 17500 |
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SI4963BDY-T1-E3 DISTI # 33632322 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
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SI4963BDY-T1-E3 DISTI # 33962571 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R RoHS: Compliant | 2197 |
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SI4963BDY-T1-E3 DISTI # SI4963BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4963BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
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SI4963BDY-T1-E3 DISTI # SI4963BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R (Alt: SI4963BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
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SI4963BDY-T1-E3 DISTI # 69W7205 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7205) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 | |
SI4963BDY-T1-E3. DISTI # 30AC0174 | Vishay Intertechnologies | DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:6.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:12V,No. of Pins:8Pins RoHS Compliant: No | 0 |
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SI4963BDY-T1-E3 DISTI # 70026239 | Vishay Siliconix | SI4963BDY-T1-E3 P-channel MOSFET Module,4.9 A,20 V,8-Pin SOIC RoHS: Compliant | 0 |
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SI4963BDY-T1-E3 DISTI # 781-SI4963BDY-E3 | Vishay Intertechnologies | MOSFET 20V 6.2A 2W RoHS: Compliant | 7295 |
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SI4963BDY-T1-E3 | Vishay Siliconix | 2500 |
| |
SI4963BDY-T1-E3 | Vishay Siliconix | 2000 |
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SI4963BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1635 | |
SI4963BDY-T1-E3 DISTI # 2335325 | Vishay Intertechnologies | MOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC RoHS: Compliant | 4509 |
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SI4963BDY-T1-E3 DISTI # 2335325 | Vishay Intertechnologies | MOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC | 4740 |
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SI4963BDY-T1-E3 | Vishay Intertechnologies | MOSFET 20V 6.2A 2W | Americas - |
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: SI4963BDY-T1-E3 OMO.#: OMO-SI4963BDY-T1-E3 |
MOSFET 20V 6.2A 2W | |
Mfr.#: SI4963BDY-T1-GE3 OMO.#: OMO-SI4963BDY-T1-GE3 |
MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V | |
Mfr.#: SI4963BDY-T1-GE3 OMO.#: OMO-SI4963BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V | |
Mfr.#: SI4963BDY-T1-E3 OMO.#: OMO-SI4963BDY-T1-E3-VISHAY |
MOSFET 2P-CH 20V 4.9A 8-SOIC |