 |  | | |
| PartNumber | SI4860DY-T1-E3 | SI4860DY-T1 | SI4860DY |
| Description | IGBT Transistors MOSFET 30V 16A 1.6W | MOSFET 30V 16A 1.6W | |
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI4860DY-E3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | SO-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 1.6 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 12 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 46 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4860DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4162DY-T1-GE3 | |
Vishay |
SI4860DY-T1-E3 | IGBT Transistors MOSFET 30V 16A 1.6W | |
| SI4860DY-T1-GE3 | MOSFET N-CH 30V 11A 8-SOIC | ||
| SI4860DY-T1 | MOSFET 30V 16A 1.6W | ||
| SI4860DY | Nuevo y original | ||
| SI4860DY-T1-E3. | Nuevo y original |