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SI4860DY-T1-GE3

SI4860DY-T1-GE3
Mfr. #:
SI4860DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4162DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4860DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4860DY-T1-GE3 DatasheetSI4860DY-T1-GE3 Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4860DY-GE3
Unidad de peso:
0.017870 oz
Tags
SI4860DY-T, SI4860, SI486, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 11A 8-SOIC
***ponent Sense
TRAN SI4860DY
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.6W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI4860DY-T1-GE3
DISTI # SI4860DY-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4860DY-T1-GE3
    DISTI # 781-SI4860DY-GE3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4162DY-T1-GE3
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      SI4860DY-T1-GE3

      Mfr.#: SI4860DY-T1-GE3

      OMO.#: OMO-SI4860DY-T1-GE3

      		 MOSFET RECOMMENDED ALT 781-SI4162DY-T1-GE3
      SI4860DY-T1-E3

      Mfr.#: SI4860DY-T1-E3

      OMO.#: OMO-SI4860DY-T1-E3-VISHAY

      		 IGBT Transistors MOSFET 30V 16A 1.6W
      SI4860DY-T1

      Mfr.#: SI4860DY-T1

      OMO.#: OMO-SI4860DY-T1-1190

      		 MOSFET 30V 16A 1.6W
      SI4860DY

      Mfr.#: SI4860DY

      OMO.#: OMO-SI4860DY-1190

      		 Nuevo y original
      SI4860DY-T1-E3.

      Mfr.#: SI4860DY-T1-E3.

      OMO.#: OMO-SI4860DY-T1-E3--1190

      		 Nuevo y original
      SI4860DY-T1-GE3

      Mfr.#: SI4860DY-T1-GE3

      OMO.#: OMO-SI4860DY-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 11A 8-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de SI4860DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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