SI4835DDY-T1-G

SI4835DDY-T1-GE3 vs SI4835DDY-T1-G vs SI4835DDY-T1-GE3-CUT TAPE

 
PartNumberSI4835DDY-T1-GE3SI4835DDY-T1-GSI4835DDY-T1-GE3-CUT TAPE
DescriptionMOSFET -30V Vds 25V Vgs SO-8
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
TradenameTrenchFETTrenchFET-
PackagingReelDigi-ReelR Alternate Packaging-
SeriesSI4TrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI4835DDY-GE3--
Unit Weight0.006596 oz0.006596 oz-
Part Aliases-SI4835DDY-GE3-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-1 Channel-
Supplier Device Package-8-SO-
Configuration-Single-
FET Type-MOSFET P-Channel, Metal Oxide-
Power Max-5.6W-
Transistor Type-1 P-Channel-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1960pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-13A (Tc)-
Rds On Max Id Vgs-18 mOhm @ 10A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-65nC @ 10V-
Pd Power Dissipation-2.5 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-9 ns 15 ns-
Rise Time-13 ns 100 ns-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-8.7 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-18 mOhms-
Transistor Polarity-P-Channel-
Typical Turn Off Delay Time-32 ns 28 ns-
Typical Turn On Delay Time-11 ns 44 ns-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4835DDY-T1-GE3 MOSFET -30V Vds 25V Vgs SO-8
SI4835DDY-T1-G Nuevo y original
SI4835DDY-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI4835DDY-T1-GE3 MOSFET P-CH 30V 13A 8-SOIC
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