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| PartNumber | SI4835DDY-T1-GE3 | SI4835DDY-T1-E3 | SI4835DDY-T1-G |
| Description | MOSFET -30V Vds 25V Vgs SO-8 | MOSFET -30V Vds 25V Vgs SO-8 | |
| Manufacturer | Vishay | Vishay | Vishay Siliconix |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | SI4 | SI4 | TrenchFETR |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI4835DDY-GE3 | SI4835DDY-E3 | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Part Aliases | - | - | SI4835DDY-GE3 |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | 8-SO |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 5.6W |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 1960pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 13A (Tc) |
| Rds On Max Id Vgs | - | - | 18 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 3V @ 250μA |
| Gate Charge Qg Vgs | - | - | 65nC @ 10V |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9 ns 15 ns |
| Rise Time | - | - | 13 ns 100 ns |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 8.7 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Rds On Drain Source Resistance | - | - | 18 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 32 ns 28 ns |
| Typical Turn On Delay Time | - | - | 11 ns 44 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4835DDY-T1-GE3 | MOSFET -30V Vds 25V Vgs SO-8 | |
| SI4835DDY-T1-E3 | MOSFET -30V Vds 25V Vgs SO-8 | ||
| SI4835DDY-T1-G | Nuevo y original | ||
| SI4835DDY-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI4835DDY-TI-GE3 | Nuevo y original | ||
Vishay |
SI4835DDY-T1-E3 | MOSFET P-CH 30V 13A 8-SOIC | |
| SI4835DDY-T1-GE3 | MOSFET P-CH 30V 13A 8-SOIC |