 |  | | |
| PartNumber | SI3900DV-T1-E3 | SI3900DV | SI3900DV-T1 |
| Description | MOSFET TSOP6 20V DUAL N-CH (D-S) TREN | MOSFET RECOMMENDED ALT 781-SI3900DV-E3 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.4 A | - | - |
| Rds On Drain Source Resistance | 125 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.15 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI3 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI3900DV-E3 | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3900DV-T1-E3 | MOSFET TSOP6 20V DUAL N-CH (D-S) TREN | |
| SI3900DV-T1-GE3 | MOSFET 20V Vds 12V Vgs TSOP-6 | ||
| SI3900DV | Nuevo y original | ||
| SI3900DV-T1 | MOSFET RECOMMENDED ALT 781-SI3900DV-E3 | ||
| SI3900DV-T1-F3 | Nuevo y original | ||
Vishay |
SI3900DV-T1-E3 | MOSFET 2N-CH 20V 2A 6-TSOP | |
| SI3900DV-T1-GE3 | MOSFET 2N-CH 20V 2A 6-TSOP |