SI3900DV-T1-GE3

SI3900DV-T1-GE3
Mfr. #:
SI3900DV-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V Vds 12V Vgs TSOP-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3900DV-T1-GE3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SI3900DV-T1-GE3 DatasheetSI3900DV-T1-GE3 Datasheet (P4-P6)SI3900DV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI3900DV-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI3
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI3900DV-GE3
Unidad de peso:
0.000705 oz
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI3900DV-T1-GE3 Dual N-channel MOSFET Transistor; 2 A; 20 V; 6-Pin TSOP
***ical
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3900DV-T1-GE3
DISTI # 32748690
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.2754
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.3763
  • 6000:$0.3910
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # V36:1790_09216710
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.3818
  • 1500000:$0.3820
  • 300000:$0.3925
  • 30000:$0.4090
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3579
  • 18000:$0.3679
  • 12000:$0.3789
  • 6000:$0.3949
  • 3000:$0.4069
SI3900DV-T1-GE3
DISTI # 35R0064
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 10000:$0.3560
  • 6000:$0.3640
  • 4000:$0.3780
  • 2000:$0.4200
  • 1000:$0.4620
  • 1:$0.4820
SI3900DV-T1-GE3
DISTI # 35R6229
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 1000:$0.4240
  • 500:$0.5380
  • 250:$0.5820
  • 100:$0.6250
  • 50:$0.7200
  • 25:$0.8150
  • 1:$0.9900
SI3900DV-T1-GE3
DISTI # 70616165
Vishay SiliconixSI3900DV-T1-GE3 Dual N-channel MOSFET Transistor,2 A,20 V,6-Pin TSOP
RoHS: Compliant
0
  • 300:$0.6000
  • 600:$0.5000
  • 1500:$0.4600
  • 3000:$0.3800
SI3900DV-T1-GE3
DISTI # 781-SI3900DV-GE3
Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
2949
  • 1:$0.9700
  • 10:$0.8060
  • 100:$0.6180
  • 500:$0.5320
  • 1000:$0.4190
  • 3000:$0.3910
  • 6000:$0.3720
  • 9000:$0.3640
SI3900DV-T1-GE3
DISTI # 8123170P
Vishay IntertechnologiesTRANS MOSFET N-CH 20V 2A, RL2360
  • 1500:£0.3940
  • 760:£0.4280
  • 160:£0.4650
SI3900DV-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant
Americas -
  • 3000:$0.3980
  • 6000:$0.3780
  • 12000:$0.3660
  • 18000:$0.3560
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Standard LEDs - SMD GREEN WTR CLEAR 40mcd 574nm
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SI3900DV-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,97 US$
0,97 US$
10
0,81 US$
8,06 US$
100
0,62 US$
61,80 US$
500
0,53 US$
266,00 US$
1000
0,42 US$
419,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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