SI2312DS-T

SI2312DS-T1 vs SI2312DS-T1-E3 vs SI2312DS-T1-GE3

 
PartNumberSI2312DS-T1SI2312DS-T1-E3SI2312DS-T1-GE3
DescriptionMOSFET RECOMMENDED ALT 781-SI2312BDS-E3MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
ManufacturerVISHAY--
Product CategoryIC Chips--
Fabricante Parte # Descripción RFQ
SI2312DS-T1 MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
SI2312DS-T1-E3 MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
SI2312DS-T1-GE3 Nuevo y original
SI2312DS-T1/C2T0D Nuevo y original
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