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SI2312DS-T1-E3

SI2312DS-T1-E3
Mfr. #:
SI2312DS-T1-E3
Fabricante:
Vishay Intertechnologies
Descripción:
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2312DS-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SI2312DS-T, SI2312D, SI2312, SI231, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; N-Channel; 0.027 Ohms (Typ.) @ 4.5 V, 0.042 Ohms (Typ.) @ 1.8 V; 3.77 A
*** Americas
MOSFET N-CH VDS20V VGS 8V ID4.9A
***nell
MOSFET, N, TO-236; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.9A; On State Resistance:0.033ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.65V; Case Style:TO-236; Termination Type:SMD
Parte # Mfg. Descripción Valores Precio
SI2312DS-T1-E3
DISTI # 06J7575		Vishay IntertechnologiesMOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    SI2312DS-T1-E3
    DISTI # 781-SI2312DS-E3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2312BDS-E3
    RoHS: Compliant    		0
      SI2312DS-T1-E3Vishay Intertechnologies 3
        Imagen Parte # Descripción
        SI2312DS

        Mfr.#: SI2312DS

        OMO.#: OMO-SI2312DS-1190

        		 Nuevo y original
        SI2312DS-T1

        Mfr.#: SI2312DS-T1

        OMO.#: OMO-SI2312DS-T1-1190

        		 MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
        SI2312DS-T1-E3

        Mfr.#: SI2312DS-T1-E3

        OMO.#: OMO-SI2312DS-T1-E3-1190

        		 MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
        SI2312DS-T1-GE3

        Mfr.#: SI2312DS-T1-GE3

        OMO.#: OMO-SI2312DS-T1-GE3-1190

        		 Nuevo y original
        SI2312DS-T1/C2T0D

        Mfr.#: SI2312DS-T1/C2T0D

        OMO.#: OMO-SI2312DS-T1-C2T0D-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de SI2312DS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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